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RF142
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications
The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications(R) (GSM(R)) and other Time Division Multiple Access (TDMA) applications. The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA. The device consists of two sections: an RF detector, and a gain controller. The RF142, when combined with a PA and a coupler, forms a closed PA control loop, where the PA output power is controlled by a single analog reference voltage, typically supplied by the baseband. The RF142 device package and pin configuration are shown in Figure 1. The signal pin assignments and functional pin descriptions are specified in Table 1. An RF142 block diagram is shown in Figure 2.
Features
* RF PA controller for use with HBT PAs * 50 dB detector dynamic range * Broadband, logarithmic power detector (800 MHz to 2000 MHz) * Logarithmic RF power detector requires no external diodes * Integrator and gain shaping block enhance loop stability and linearity * Three-cell battery operation (2.7 V to 5.0 V) * Standby mode with 20 A of current consumption * 20-pin Thin Shrink Small Outline Package (TSSOP)
Applications
* Transmit power control for dual or multi-band GSM digital cellular handsets
G ND1 VREF VMP VAPC+ VAPCENABLE RFPC+ RFPCG ND2 VCC1
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
VCC2 VPCGSM VPCDCS BAND AUXAUX+ CAPCAP+ NC NC
100774A-1_090700
Figure 1. RF142 Pin Configuration - 20-Pin TSSOP
Data Sheet
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Doc. No. 100774B September 7, 2000
RF142 Table 1. RF142 Signal Description Pin #
1 2 3 4 5 6 7 8 9 10
Power Amplifier Controller
Name
GND1 VREF VMP VAPC+ VAPC- ENABLE RFPC+ RFPC- GND2 VCC1 Ground
Description
Output reference voltage Midpoint voltage for gain shaper Tx power control positive polarity Tx power control negative polarity Device enable (active high) RF input to detector positive polarity RF input to detector negative polarity Ground Power supply
Pin #
11 12 13 14 15 16 17 18 19 20
Name
NC NC CAP+ CAP- AUX+ AUX- BAND VPCDCS VPCGSM VCC2 No connect No connect
Description
Integrator time constant Cap+ Integrator time constant Cap- Aux output + Aux output - Band select. High selects VPCDCS as the output control pin; low selects VPCGSM as the output control pin. 1800 MHz/1900 MHz power amplifier control voltage 900 MHz power amplifier control voltage Vcc for the output stage
BAND
VPCGSM VREF VMP
Gain Shaper
VPCDCS RFPC+ RFPC- VCC2 VCC1 GND
AUX+
Logarithmic Detector Amp 1 Amp 2
DC Bias Circuitry
AUX-
CAP- CAP+
VAPC- VAPC+
ENABLE
C013
Figure 2. RF142 Block Diagram
Technical Description
The RF142 dual-band PA controller is designed to control HBT PAs. It combines the functions of a broadband RF detector and error amplifier/integrator to provide transmit burst control for dual or multi-band HBT PAs. It has two separate dedicated output stages and pins for GSM900MHz PAs and GSM1800/1900 MHz PAs. The device, when connected to dual or multi-band HBT PAs with a coupler, forms a loop to control the transmit power in a dual or multi-band wireless application. The transmit power is controlled by a single balanced analog reference voltage input to the RF142. The RF142 has low power consumption and operates off a three-cell battery pack (2.7 V to 5.0 V). Extremely low standby current of 20 A maximizes the standby time of a GSM handset. The absolute maximum ratings of the RF142 are provided in Table 2, the operating conditions are specified in Table 3, and electrical specifications are provided in Table 4. Figure 3 shows
2 September 7, 2000
the diagram for a typical application circuit using the RF142 PA controller. Figure 4 shows the package dimensions for the 20pin TSSOP device and Figure 5 provides the tape and reel dimensions. RF Detector. An external RF coupler is required at the PA output to couple the RF output from the PA to the RF logarithmic detector input. The input to the logarithmic detector must be within the range -40 dBm to +10 dBm. The coupled signal is fed to the input of the RF power detector. The output from the detector is a DC voltage that is proportional to the RF power (in dBm) at the RFPC input to the device. The dynamic range of the detector is 50 dB. Integrating Error Amplifier. The integrating error amplifier (Amp2) amplifies and integrates the voltage difference between the detector output and the power control input, VAPC. The integrator time constant is set by the two external capacitors connected from AUX pins to the CAP pins.
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100774A
Power Amplifier Controller
RF142
Gain Shaper. The output of the integrator is fed to the gain shaping circuit that drives the gain control input of the external RF PA. The midpoint voltage of the PA control voltage VPC, is determined by the VMP input. The VMP input is obtained by connecting a resistor divider to the 2.4 V reference output, VREF. The integrator in the integrating error amplifier is used to stabilize the loop. The maximum voltage obtainable on VPCGSM and VPCDCS is generally 1 V below VCC2 (pin 20). Therefore, it may be more desirable to use a higher voltage than VCC. Output Stages. Each of the two output stages is dedicated to a frequency band: one for GSM900MHz and one for GSM1800/PCS1900 MHz. The selection of the output stage is determined by the BAND select signal. A high signal selects the VPCDCS as the output pin and a low signal selects VPCGSM
as the output pin. When either output is inactive, its residual output level is extremely low to ensure that the inactive PA is completely off. DC Bias Block. The DC bias block provides voltage bias to the whole chip, which may be put in standby mode using the ENABLE digital input control pin (pin 6). The ENABLE pin is compatible with TTL levels. When the ENABLE pin is driven high, the device is enabled.
Electro-Static Discharge (ESD) Sensitivity
The RF142 is a static sensitive electronic device. Do not operate or store it near strong electrostatic fields. Take proper ESD precautions.
Table 2. Absolute Maximum Ratings Parameter
Storage Temperature Supply Voltage Power Dissipation Input Voltage Range
Minimum
-40 -0.3 --0.3
Maximum
+125 5.0 500 Vcc
Units
C V mW V
Table 3. RF142 Recommended Operating Conditions Parameter
Supply Voltage (Vcc) Operating Temperature
Minimum
2.7 -30
Typical
3.6 +25
Maximum
4.8 +85
Units
V C
Table 4. RF142 Electrical Characteristics (1 of 2)
(TA = 25 C, Vcc = 3.6 V)
Parameter
Detector frequency range Detector monotonic dynamic range Detector gain Detector stability Detector non-linearity error VAPC common mode range VAPC differential range VAPC input impedance VREF GSM Maximum Control Voltage DCS Maximum Control Voltage f
Symbol
Test Condition
Min
800 50
Typ
Max
2000
Units
MHz dB mV/dB
15 Maximum input power and over temperature range. Minimum input power and over temperature range. RFPC from -40 dBm to +8 dBm 1.35 1 ZVAPC VREF VPCGSM VPCDCS Band <= 0.8 V Ivpcgsm <= 75 mA Band >= 1.90 V Ivpcdcs <= 50 mA 2.2 Vcc-1.1 Vcc-1.1 20//5 2.4 Vcc-1.0 Vcc-1.0 2.6 Vcc-0.9 Vcc-0.9 0.5 3 2
dB dB dB V Vp-p k//pF V V V
100774A
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3 September 7, 2000
RF142 Table 4. RF142 Electrical Characteristics (2 of 2)
(TA = 25 C, Vcc = 3.6 V)
Power Amplifier Controller
Parameter
GSM Maximum Sink/Source Control Current DCS Maximum Sink/Source Control Current VPCGSM off voltage VPCDCS off voltage Control output noise Error amplifier gain (Note) Auxiliary amplifier gain Standby current Supply current BAND and ENABLE VIH BAND and ENABLE VIL Note. Included Gain Shaper
Symbol
Ivpcgsm Ivpcdsc BAND <= 0.8 V BAND >= 1.90 V ENABLE = high BAND = low ENABLE = high BAND = high GSM and DCS
Test Condition
Min
90 70
Typ
100 80
Max
110 90 0.1 0.1 12
Units
mA mA V V nV/Hz dB dB A mA V V
Low gain on shaper ISTDBY ICC VIH VIL ENABLE = low VPCGSM and VPCDCS source current = 0 mA
35 25
40 28 20 58
44 31 75 0.8
1.9
VPA
VCC GND
GND
VCC GND DCSOUT T/R SW
TXDCS
FEEDBACK TO MIXER
DCSIN GND GSMIN
Dual Band PA
GND GSMOUT GND T/R SW
DIPLEXER
TO ANTENNA
TXGSM
GND
FILTER
DCSAPC GND GSMAPC
BAND VPCDCS Gain Shaper VPCGSM
Logarithmic Detector
VREF VMP
AUX+ AUXAmp 1 Amp 2
RFPC+ RFPCVCC1 VCC2 GND
VPAC
RF142
CAPCAP+ VAPC-
DC Bias Circuitry
VAPC+
ENABLE
PAEN
PA RAMP CONTROL
C473
Figure 3. Typical RF142 Application Circuit 4 September 7, 2000
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100774A
Power Amplifier Controller
RF142
0.65 mm
Pin #1 indicator
6.500.10 mm
1.00+0.5/-0.2 mm 1.20 mm max
6.40 mm
0.24+0.06/-0.05 mm
0.100.05 mm
SIDE VIEW TOP VIEW
1.00 mm Ref
4.400.10 mm
END VIEW
Figure 4. RF142 Package Dimensions - 20-Pin TSSOP
C003a
8.00 0.10
4.00 0.10
1.50 0.10 2.00 0.05
1.75 0.10
Pin #1 indicator
12.00 +0.30/-0.10 5.50 0.05
1.50 0.25 4.00 0.292 0.013 1.20
o 8 Max
7o Max
Notes: 1. Carrier tape material: black conductive polycarbonate 2. Cover tape material: transparent conductive PSA 3. Cover tape size: 9.3 mm width 4. Tolerance: .XX = 0.10 5. Quantity: 2500 per reel 6. All measurements are in millimeters
6.75 0.10
1.70 0.10
7.05 0.10
C879
Figure 5. RF142 Tape and Reel Dimensions
100774A
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5 September 7, 2000
RF142
Power Amplifier Controller
Ordering Information
Model Name
GSM and PCS PA Controller
Manufacturing Part Number
RF142
Product Revision
(c) 2000, Conexant Systems, Inc. All Rights Reserved.
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100774A
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